GPP15A Datasheet, PDF (1/2 Pages) Shenzhen Taychipst Electronic Co., Ltd – GLASS PASSIVATED RECTIFIER

GPP15A - GPP15M
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.5 A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: D O - 1 5
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.40 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
A
B
A
C
D
DO-15
Dim
Min
Max
A
25.40
—
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbo GPP15A GPP15B GPP15D GPP15G GPP15J GPP15K GPP15M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100 200 400
600 800 1000 V
RMS Reverse Voltage
VR(RMS)
35
70
140 280
420
560
700
V
Average Rectified Output Current
(Note 1)
@T_A = 75°C
IO
1.5
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
50
A
rated load (JEDEC Method)
Forward Voltage
@I_F = 2.0A
VFM
1.1
V
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
5.0
200
µA
Typical Junction Capacitance (Note 2)
Cj
15
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
R
JA
45
°C /W
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
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