SXA-389B Datasheet, PDF (1/8 Pages) SIRENZA MICRODEVICES – 400-2500 MHz ¼ W Medium Power GaAs HBT Amplifier with Active Bias

Product Description
Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-
mountable plastic package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver devices for
infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-
CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital
applications.
Typical OIP₃, P1dB, Gain
50
45
40
35
30
25
20
15
10
5
0
850 MHz
OIP3
P1dB
Gain
1960 MHz 2140 MHz 2450 MHz
SXA-389B
SXA-389BZ
Pb RoHS Compliant
& Green Package
400-2500 MHz ¼ W Medium Power
GaAs HBT Amplifier with Active Bias
Product Features
• Now Available in Leed Free, RoHS Compliant, &
Green Packaging
• Lower Rth for increased MTTF
10⁸
hrs.
at
T
Lead
=
85°C
• On-chip Active Bias Control, Single 5V Supply
• Excellent Linearity:
+43 dBm typ. OIP₃ at 1960 MHz
• High P1dB : +25 dBm typ.
• High Gain: +18.5 dB at 850 MHz
• Efficient: consumes only 575 mW
Applications
• W-CDMA, PCS, Cellular Systems
• Multi-Carrier Applications
Symbol
Parameters: Test Conditions:
Z₀ = 50 Ohms, Ta = 25°C
P_1dB
Output Power at 1dB Compression
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
Units
dBm
Min.
24
Typ.
25
25
25
25
Max.
S₂₁
Small signal gain
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
18.4
dB
13.6
12.5
13.5
15
12.8
S₁₁
Input VSWR
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
-
f = 2450 MHz
1.2:1
1.3:1
1.2:1
1.2:1
2.0:1
OIP₃
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
dBm
41
43
39
42
41
NF
Noise Figure
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
dB
f = 2450 MHz
4.5
4.8
6.3
5.0
5.7
I_D
Device Current
Vcc = 5V
mA
90
115
135
P_DISS
Operating Dissipated Power
mW
575
R_th, j-l
Thermal Resistance (junction - lead)
° C/W
70
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights
reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102915 Rev D