RLS244 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE

RLS244
SILICON EPITAXIAL PLANAR DIODE
High Voltage Switching
General Purpose Rectification Applications
Features
• Glass sealed envelope. (MSD)
• V_RM = 250V guaranteed.
• High reliability.
Absolute Maximum Ratings (T_a = 25^oC)
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current(1s)
Power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
V_RM
250
V
V_R
220
V
I_FM
625
mA
I_O
200
mA
I_surge
1000
mA
P_tot
300
mW
T_j
175
O_C
T_S
-65 to +175
O_C
Characteristics at T_a = 25^oC
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
at I_F = 200mA
V_F
-
-
1.5
V
Reverse current
at V_R = 220V
I_R
-
-
10
uA
Capacitance between terminals
at f = 1MHz
C_T
-
-
3
pF
Reverse recovery time
at I_F = 20mA, I_R = 20mA, R_L = 50Ω
t_rr
-
-
75
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/08/2002