SWVS22 Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode SOT-23 MOSFET

SWVS22
N-channel Enhanced mode SOT-23 MOSFET
Features
SOT-23
 High ruggedness
 Low R_DS(ON) (Typ 36mΩ)@V_GS=4.5V
(Typ 60mΩ)@V_GS=2.5V
Low Gate Charge (Typ 5.1nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:DC-DC Converter，Inverter，
Synchronous Rectification
2
1
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 20V
I_D
: 4A
R_DS(ON) : 36mΩ@V_GS=4.5V
60mΩ@V_GS=2.5V
2
1
3
Order Codes
Item
Sales Type
1
SW R VS22
Absolute maximum ratings
Marking
VS22
Package
SOT-23
Packaging
REEL
Symbol
Parameter
Value
Unit
V_DSS
I_D
I_DM
V_GS
E_AS
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 3)
20
4*
2.5*
16
± 12
23
5
V
A
A
A
V
mJ
V/ns
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
0.87
0.007
W
W/^oC
T_STG, T_J Operating junction temperature & storage temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
-55 ~ + 150
o_C
Symbol
Parameter
Value
Unit
R_thja Thermal resistance, Junction to ambient (note )
144
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user's
board design. 144 ^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jul. 2015. Rev. 1.0
1/6