SWP4N65 Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel MOSFET (TO-220F , TO-220)

SAMWIN
SW4N65
N-channel MOSFET
Features
TO-220F
TO-220
■ High ruggedness
■ R_DS(ON) (Max 2.6 Ω)@V_GS=10V
■ Gate Charge (Typ 18nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BV_DSS : 650V
I_D
: 4.0A
R_DS(ON) : 2.6ohm
2
1
3
Order Codes
Item
1
2
Sales Type
SW P4N65
SW F 4N65
Absolute maximum ratings
Marking
SW4N65
SW4N65
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
(note 1)
(note 2)
(note 1)
(note 3)
T_STG, T_J
T_L
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc
R_thcs
R_thja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Value
TO-220
TO-220F
650
4.0
4.0*
2.6
2.5*
16
± 30
164
10.6
4.5
100
40*
0.78
0.32
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
TO-220
TO-220F
1.25
3.16
0.5
62.5
Unit
o_C/W
o_C/W
o_C/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/7