SWI50N06A Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel MOSFET (TO-251 , TO-252)

SAMWIN
SW50N06A
N-channel MOSFET
Features
■ High ruggedness
■ R_DS(ON) (Max 0.023 Ω)@V_GS=10V
■ Gate Charge (Typ 30nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-251
TO-252
12 ₃
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching mode power appliances.
BV_DSS : 60V
I_D
: 50A
R_DS(ON) : 0.023 ohm
2
1
3
Order Codes
Item
1
2
Sales Type
SW I 50N06A
SW D 50N06A
Marking
SW50N06A
SW50N06A
Package
TO-251
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
(note 1)
(note 2)
(note 1)
(note 3)
T_STG, T_J
T_L
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to sink
Thermal resistance, Junction to ambient
Value
60
50
34
200
± 20
780
13
7
108
0.86
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
Unit
Min.
Typ.
Max.
1.15
o_C/W
50
o_C/W
62.5
o_C/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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