SW9N90B Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220 MOSFET

SW9N90B
N-channel Enhanced mode TO-220 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 1.34Ω)@V_GS=10V
 Low Gate Charge (Typ 36nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:UPS, SMPS
TO-220
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 900V
I_D
: 9A
R_DS(ON) : 1.34Ω
2
1
3
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW P 9N90B
SW9N90B
TO-220
TUBE
Absolute maximum ratings·
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
Value
900
9*
5.7*
36
±30
680
100
5
245
1.96
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Value
0.51
58
Unit
o_C/W
o_C/W
Oct. 2015. Rev. 2.0
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