SW9N10V1 Datasheet, PDF (1/5 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-252 MOSFET

SW9N10V1
N-channel Enhanced mode TO-252 MOSFET
Features
TO-252
 High ruggedness
 Low R_DS(ON) (Typ 115mΩ)@V_GS=10V
(Typ 138mΩ)@V_GS=4.5V
 Low Gate Charge (Typ 5.6nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:DC-DC Converter，Inverter，
Synchronous Rectification
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 100V
I_D
: 9A
R_DS(ON) : 115mΩ@V_GS=10V
138mΩ@V_GS=4.5V
2
1
3
Order Codes
Item
Sales Type
1
SW D 9N10V1
Marking
SW9N10V1
Package
TO-252
Packaging
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Peak diode recovery dv/dt
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
Value
100
9*
5.6*
36
± 20
5
33
0.3
-55 ~ + 150
300
Unit
V
A
A
A
V
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
3.8
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sept. 2016. Rev. 2.0 1/5