SW9435 Datasheet, PDF (1/4 Pages) Xian Semipower Electronic Technology Co., Ltd. – P-channel SOP-8 MOSFET

SAMWIN
Features
■ R_DS(ON) (Typ 43.5 mΩ)@V_GS=-10V
■ R_DS(ON) (Typ 64mΩ)@V_GS=-4.5V
SW9435
P-channel SOP-8 MOSFET
SOP-8(Top View)
BV_DSS : -30V
I_D
: -5.3A
General Description
The SW9435 is the P-Channel logic enhancement mode power field effect transistors,
using high cell density, DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone, notebook
computer power management and other battery powered circuits, and lower power loss that are
needed in a very small outline surface mount package.
Order Codes
Item
Sales Type
1
SW 9435
Marking
SW9435
Package
SOP-8
Absolute maximum ratings
Packaging
REEL
Symbol
Parameter
Value
Unit
V_DSS Drain to Source Voltage
I_D
Continuous Drain Current (@T_C=25^oC)
I_DM
Drain current pulsed
V_GS
Gate to Source Voltage
Total power dissipation (@T_C=25^oC)
P_D
Derating Factor above 25^oC
(note 1)
-30
-5.3*
-20
± 20
1.92
0.015
V
A
A
V
W
W/^oC
T_STG, T_J Operating Junction Temperature & Storage Temperature
-55 ~ + 150
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thja
Thermal resistance, Junction to ambient
*. The data tested bysurface mounted on a 1 inch² FR-4 board with 2OZ copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Value
65
Unit
o_C/W
Apr. 2015. Rev.1.0
1/4