SW8N70K Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-252 MOSFET

SW8N70K
N-channel Enhanced mode TO-220F/TO-252 MOSFET
Features
TO-220F
TO-252
z High ruggedness
z Low R_DS(ON) (Typ 0.55Ω)@V_GS=10V
z Low Gate Charge (Typ 21nC)
z Improved dv/dt Capability
z 100% Avalanche Tested
z Application:LED, PC Power, Charge
12 ₃
12 ₃
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 700V
I_D
: 8A
R_DS(ON) : 0.55Ω
2
1
3
Order Codes
Item
1
2
Sales Type
SW F 8N70K
SW D 8N70K
Marking
SW8N70K
SW8N70K
Package
TO-220F
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
(note 1)
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
TO-220F
TO-252
700
8*
5*
32
·30
65
7.6
5
22.4
178.6
0.18
1.4
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-220F
TO-252
5.57
0.7
50
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2016. Rev. 2.0
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