SW8N65K Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-262 MOSFET

SW8N65K
N-channel Enhanced mode TO-262 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 0.53Ω)@V_GS=10V
 Low Gate Charge (Typ 20nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:LED,Charge,PC Power
TO-262
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 650V
I_D
: 8A
R_DS(ON) : 0.53Ω
2
1
3
Item
Sales Type
Marking
1
SW U 8N65K
SW8N65K
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
(note 1)
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Package
TO-262
Value
650
8*
5*
32
± 30
150
25
5
125
1
-55 ~ + 150
300
Packaging
TUBE
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Value
1.0
66
Unit
o_C/W
o_C/W
Jan. 2015. Rev. 1.0
1/6