SW830D1 Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel TO-220/I-PAK/D-PAK/TO-220F MOSFET

SAMWIN
SW830D1
N-channel TO-220/I-PAK/D-PAK/TO-220F MOSFET
Features
TO-220
TO-251 TO-252 TO-220F
■ High ruggedness
■ R_DS(ON) (Max 1.54Ω)@V_GS=10V
■ Gate Charge (Typ 17nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12
3
12
3
1
2
3
12
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
Order Codes
BV_DSS : 500V
I_D
: 5A
R_DS(ON) : 1.54Ω
2
1
3
Item
Sales Type
1
SW P 830
2
SW I 830
3
SW D 830
4
SW F 830
Marking
SW830D1
SW830D1
SW830D1
SW830D1
Package
TO-220
TO-251
TO-252
TO-220F
Packaging
TUBE
TUBE
REEL
TUBE
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Value
TO-220 TO-251 TO-252 TO-220F
Drain to Source Voltage
500
Continuous Drain Current (@T_C=25^oC)
5*
Continuous Drain Current (@T_C=100^oC)
3.2*
Drain current pulsed
(note 1)
20
Gate to Source Voltage
± 30
Single pulsed Avalanche Energy
(note 2)
320
Repetitive Avalanche Energy
(note 1)
30
Peak diode Recovery dv/dt
(note 3)
5
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
123.6 101.9 113.4 18.7
1.0
0.8
0.9
0.15
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
Maximum Lead Temperature for soldering
300
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220 TO-251 TO-252 TO-220F
1.01 1.23 1.10
6.7
56.7 75.9
47
Unit
o_C/W
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
July. 2014. Rev.3.0
1/6