SW80N08V1 Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251/DFN5*6 MOSFET

SW80N08V1
N-channel Enhanced mode TO-251/DFN5*6 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 10mΩ)@V_GS=4.5V
(Typ 9mΩ)@V_GS=10V
 Low Gate Charge (Typ 79nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
General Description
TO-251
DFN5*6
1
2
3
G(4) D(5,6,7,8)
S(1,2,3)
TO-251: 1.Gate 2.Drain 3.Source
DFN5*6: 4.Gate 5,6,7,8.Drain 1,2,3.Source
BV_DSS : 80V
I_D
: 80A
R_DS(ON) : 10mΩ @V_GS=4.5V
9mΩ @V_GS=10V
D
G
This power MOSFET is produced with advanced technology of SAMWIN.
S
This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
Order Codes
Item
Sales Type
1
SW I 80N08V1
2
SW HA 80N08V1
Marking
SW80N08V1
SW80N08V1
Package
TO-251
DFN5*6
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Total power dissipation (@Ta=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
TO-251
DFN5*6
80
80*
50*
320
± 20
258
19
5
192.3
2.7
1.54
0.02
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-251
DFN5*6
0.65
76
46
Unit
o_C/W
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user's
board design.
DFN5*6 R_thja : 46^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Mar. 2017. Rev. 4.0 1/6