SW80N08V Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251 MOSFET

SW80N08V
N-channel Enhanced mode TO-251 MOSFET
Features
TO-251
 High ruggedness
 Low R_DS(ON) (Typ 10mΩ)@V_GS=10V
(Typ 11mΩ)@V_GS=4.5V
 Low Gate Charge (Typ 79nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: Synchronous Rectification,
Li Battery Protect Board, Inverter
1
23
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 80V
I_D
: 80A
R_DS(ON) : 10mΩ@VGS=10V
11mΩ@VGS=4.5V
2
1
3
Order Codes
Item
Sales Type
1
SW I 80N08V
Absolute maximum ratings
Marking
SW80N08V
Package
TO-251
Packaging
TUBE
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
(note 1)
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
80
80*
50.4*
320
± 20
222.8
13.5
5
70.9
0.56
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
1.76
80
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jan. 2015. Rev. 1.0
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