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SW80N06V1 Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251/DFN5*6 MOSFET
SW80N06V1
N-channel Enhanced mode TO-251/DFN5*6 MOSFET
Features
TO-251
DFN5*6
 High ruggedness
 Low RDS(ON) (Typ 5.5mΩ)@VGS=10V
(Typ 6.7mΩ)@VGS=4.5V
 Low Gate Charge (Typ 103nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: Synchronous Rectification,
1
2
3
1
2
3
Li Battery Protect Board, Inverter 1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including
fastswitching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
BVDSS : 60V
ID
: 80A
RDS(ON) : 5.5mΩ@VGS=10V
6.7mΩ@VGS=4.5V
2
1
3
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW I 80N06V1
2
SW HA 80N06V1
SW80N06V1
SW80N06V1
TO-251
DFN5*6
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
Drain to source voltage
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Value
TO-251 DFN5*6
Unit
60
V
80*
A
50.4*
A
IDM
Drain current pulsed
VGS
Gate to source voltage
(note 1)
320
A
± 20
V
EAS
Single pulsed avalanche energy
(note 2)
316
mJ
EAR
Repetitive avalanche energy
(note 1)
18
mJ
dv/dt Peak diode recovery dv/dt
(note 3)
5
V/ns
Total power dissipation (@TC=25oC)
PD
Derating factor above 25oC
119
1.3
0.95
0.01
W
W/oC
TSTG, TJ Operating junction temperature & storage temperature
-55 ~ + 150
oC
Maximum lead temperature for soldering
TL
purpose, 1/8 from case for 5 seconds.
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc Thermal resistance, Junction to case
Rthja Thermal resistance, Junction to ambient
Value
TO-251 DFN5*6
1.1
79
92.7
Unit
oC/W
oC/W
Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's
board design. 92.7 oC/W on a 1 in2 pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0
1/6