SW80N04V Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251/TO-252 MOSFET

SW80N04V
N-channel Enhanced mode TO-251/TO-252 MOSFET
Features
 High ruggedness
 Low R_DS(ON) Typ 6.0mΩ@V_GS=10V
Typ 7.2mΩ@V_GS=4.5V
 Low Gate Charge (Typ 49nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: LED, Charge, Adaptor
TO-251
TO-252
1
23
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics,
Including fastswitching time, low on resistance, low gate charge and especially
excellent avalanche characteristics.
BV_DSS : 40V
I_D
: 80A
R_DS(ON) : 6.0mΩ@VGS=10V
7.2mΩ@VGS=4.5V
2
1
3
Order Codes
Item
Sales Type
1
SW I 80N04V
2
SW D 80N04V
Absolute maximum ratings
Marking
SW80N04V
SW80N04V
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 3)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Package
TO-251
TO-252
Packaging
TUBE
REEL
Value
TO-251 TO-252
40
80*
50.4*
320
± 20
142
12
5
96.2
104
0.77
0.83
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-251 TO-252
1.3
1.2
85
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 2.0
1/6