SW7N80D Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-262 MOSFET

SW7N80D
N-channel Enhanced mode TO-220F/TO-262 MOSFET
Features
TO-220F TO-262
 High ruggedness
 Low R_DS(ON) (Typ 1.5Ω)@V_GS=10V
 Low Gate Charge (Typ 39nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: LED , Charge, SMPS
1
2
3
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 800V
I_D
: 7A
R_DS(ON) : 1.5Ω
2
1
3
Order Codes
Item
1
2
Sales Type
SW F 7N80D
SW U 7N80D
Marking
SW7N80D
SW7N80D
Package
TO-220F
TO-262
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 3)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-220F TO-262
800
7*
4.4*
28
± 30
326
20
5
38
179
0.3
1.4
-55 ~ + 150
300
Value
TO-220F TO-262
3.3
0.7
47
62
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2016. Rev. 3.0
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