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| SW7N70K Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220 MOSFET | |||
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SW7N70K
N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220 MOSFET
Features
TO-220F TO-251 TO-252 TO-220
ï¬ High ruggedness
ï¬ Low RDS(ON) (Typ 0.81â¦)@VGS=10V
ï¬ Low Gate Charge (Typ 17nC)
ï¬ Improved dv/dt Capability
ï¬ 100% Avalanche Tested
ï¬ Application: Charge,LED,TV-Power
12
3
12
3
12
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BVDSS : 700V
ID
: 7A
RDS(ON) : 0.81â¦
2
1
3
Item
Sales Type
1
SW F 7N70K
2
SW I 7N70K
3
SW D 7N70K
4
SW P 7N70K
Marking
SW7N70K
SW7N70K
SW7N70K
SW7N70K
Package
TO-220F
TO-251
TO-252
TO-220
Packaging
TUBE
TUBE
REEL
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Value
TO-220F TO-251 TO-252 TO-220
Drain to source voltage
700
Continuous drain current (@TC=25oC)
7*
Continuous drain current (@TC=100oC)
4.4*
Drain current pulsed
(note 1)
28
Gate to source voltage
±30
Single pulsed avalanche energy
(note 2)
120
Repetitive avalanche energy
(note 1)
9
Peak diode recovery dv/dt
Total power dissipation (@TC=25oC)
Derating factor above 25oC
(note 3)
5
24.5
147
156
133
0.2
1.2
1.3
1.06
Operating junction temperature & storage temperature
-55 ~ + 150
Maximum lead temperature for soldering
300
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Symbol
Rthjc
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
Value
TO-220F TO-251 TO-252 TO-220
5.10 0.85 0.80 0.94
49.40 80.00
55.7
Unit
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 3.0
1/7
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