SW7N65K2 Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET

SW7N65K2
N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET
Features
TO-220F TO-251 TO-252
 High ruggedness
 Low R_DS(ON) (Typ 0.57Ω)@V_GS=10V
 Low Gate Charge (Typ 14.5nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: Charge,LED,PC Power
1
23
1
23
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 650V
I_D
: 7A
R_DS(ON) : 0.57Ω
2
1
3
Item
Sales Type
1
SW F 7N65K2
2
SW I 7N65K2
3
SW D 7N65K2
Marking
SW7N65K2
SW7N65K2
SW7N65K2
Package
TO-220F
TO-251
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J
T_L
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
TO-220F TO-251 TO-252
650
7*
4.4*
28
± 30
50
3
5
20.5
113.6
125
0.16
0.91
1
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-220F TO-251
6.1
1.1
49
89
TO-252
1.0
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Dec. 2016. Rev. 3.0
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