SW7N65DW Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-263 MOSFET

SW7N65DW
N-channel Enhanced mode TO-263 MOSFET
Features
TO-263
 High ruggedness
 Low R_DS(ON) (Typ 0.96Ω)@V_GS=10V
 Low Gate Charge (Typ 34nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: LED , Charge, PC Power
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 650V
I_D
: 7A
R_DS(ON) : 0.96Ω
2
1
3
Item
Sales Type
1
SW B 7N65DW
Marking
SW7N65DW
Package
TO-263
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
650
7*
4.4*
28
± 30
151
14
5
179
1.4
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
Symbol
Parameter
Value
Unit
R_thjc Thermal resistance, Junction to case
0.7
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jan. 2017. Rev. 3.0 1/6