SW7N60K2F Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-252 MOSFET

SW7N60K2F
N-channel Enhanced mode TO-252 MOSFET
Features
TO-252
 High ruggedness
 Low R_DS(ON) (Typ 0.43Ω)@V_GS=10V
 Low Gate Charge (Typ 13nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: LED , Adaptor, Charge
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 600V
I_D
: 7A
R_DS(ON) : 0.43Ω
2
1
3
Item
Sales Type
1
SW D 7N60K2F
Marking
SW7N60K2F
Package
TO-252
Packaging
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
600
7*
4.4*
28
± 30
160
16
5
89
0.7
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
Symbol
Parameter
Value
Unit
R_thjc Thermal resistance, Junction to case
1.4
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2016. Rev. 2.0
1/6