SW7N60K Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel TO-220F/I-PAK MOSFET

SAMWIN
SW7N60K
N-channel TO-220F/I-PAK MOSFET
Features
TO-220F
TO-251
■ High ruggedness
■ R_DS(ON) (Max 0.6Ω)@V_GS=10V
■ Gate Charge (Typical 21nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12 ₃
12
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced super-junction technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, excellent avalanche characteristics, low gate charge and especially in
low on resistance. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
BV_DSS : 600V
I_D
: 7.0A
R_DS(ON) :0.6 ohm
2
1
3
Order Codes
Item
1
2
Sales Type
SW F 7N60
SW I 7N60
Absolute maximum ratings
Marking
SW7N60K
SW7N60K
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Package
TO-220F
TO-251
Packaging
TUBE
TUBE
Value
TO-220F
TO-251
600
7*
4.4*
28
± 30
120
8
24
19.8
166.7
0.16
1.33
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
TO-220F
TO-251
6.32
0.75
47.56
80.52
Unit
o_C/W
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev.1.0
1/6