SW7960U Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – Dual N-channel Enhanced mode SO-8 MOSFET

SW7960U
Features
Dual N-channel Enhanced mode SO-8 MOSFET
 High ruggedness
SO-8 (Bottom View)
BV_DSS : 60V
 Low R_DS(ON) (Typ 14mΩ)@V_GS=10V
(Typ 16mΩ)@V_GS=4.5V
 Low Gate Charge (Typ 58nC)
I_D
: 8A
R_DS(ON) : 14mΩ@V_GS=10V
 Improved dv/dt Capability
 100% Avalanche Tested
16mΩ@V_GS=4.5V
 Application:DC-DC Converter, Inverter,
D1(7,8)
Synchronous Rectification
D2(5,6)
G1(2)
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
G2(4)
S1(1)
S2(3)
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW HB 7960U
SW7960U
SO-8
REEL
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
60
8*
5*
32
± 20
588
18
5
1.36
0.01
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thja Thermal resistance, Junction to ambient
Value
92
Unit
o_C/W
Note: R_thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R_thjc is guaranteed by design while R_thca is determined by the user's
board design. 92 ^oC/W on a 1 in² pad of 2oz copper.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Aug. 2016. Rev. 2.0 1/6