SW75N75 Datasheet, PDF (1/5 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel mosfet

SAMWIN
SW75N75
N-channel MOSFET
Features
■ High ruggedness
■ R_DS(ON) (Max 8m Ω)@V_GS=10V
■ Gate Charge (Typ 126nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BV_DSS : 75V
I_D
: 75A
R_DS(ON) : 8mΩ
2
1
3
Order Codes
Item
1
Sales Type
SW P 75N75
Marking
SW 75N75
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
P_D
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
T_STG, T_J
T_L
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc
R_thcs
R_thja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
75
75*
70*
28
±30
1004
45
7
312
2.5
-55 ~ + 150
300
Value
0.4
0.5
60
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0
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