SW740 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – N-Channel MOSFET

SAMWIN
SW740
N-channel MOSFET
Features
TO-220
■ High ruggedness
■ R_DS(ON) (Max 0.55Ω)@V_GS=10V
■ Gate Charge (Typ 36nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching
mode power appliances.
BV_DSS : 400V
I_D
: 10A
R_DS(ON) : 0.55ohm
2
1
3
Order Codes
Item
1
Sales Type
SW P 740
Marking
SW740
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
(note 3)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
400
10
6.2
40
± 30
952
12.5
5.0
125
1.0
-55 ~ + 150
300
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
Min.
Typ.
Max.
1.0
0.5
62.5
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
o_C/W
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