SW70N10V Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET

SW70N10V
N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 11.7mΩ)@V_GS=10V
Low R_DS(ON) (Typ 12.4mΩ)@V_GS=4.5V
 Low Gate Charge (Typ 117nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
TO-251
TO-252 TO-220
1
2
3
1
2
3
1
23
1. Gate 2. Drain 3. Source
BV_DSS : 95V
I_D
: 70A
R_DS(ON) : 11.7mΩ @V_GS=10V
12.4mΩ @V_GS=4.5V
2
General Description
1
This power MOSFET is produced with advanced technology of SAMWIN.
3
This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
Order Codes
Item
Sales Type
1
SW I 70N10V
2
SW D 70N10V
3
SW P 70N10V
Marking
SW70N10V
SW70N10V
SW70N10V
Package
TO-251
TO-252
TO-220
Packaging
TUBE
REEL
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 3)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
TO-251 TO-252 TO-220
95
70*
44*
280
± 20
351
24
5
69.4
125
179
0.55
1.00
1.4
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
300
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
TO-251
1.8
92
Value
TO-252
1.0
TO-220
0.7
56
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0
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