SW6N90 Datasheet, PDF (1/5 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel TO-262 MOSFET

SAMWIN
SW6N90
N-channel TO-262 MOSFET
Features
■ High ruggedness
■ R_DS(ON) (Max 2.3 Ω)@V_GS=10V
■ Gate Charge (Typical 40nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-262
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology
like a electronic ballast, and also low power switching mode power appliances.
BV_DSS : 900V
I_D
: 6.0A
R_DS(ON) : 2.3ohm
2
1
3
Order Codes
Item
1
Sales Type
SW U 6N90
Marking
SW6N90
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Package
TO-262
Packaging
TUBE
Value
900
6.0*
3.78*
24
±30
550
150
5
231
1.85
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Thermal characteristics
Symbol
Parameter
R_thjc
R_thcs
R_thja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
0.54
-
65
Unit
o_C/W
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
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