SW6N80D Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251N/TO-220F/TO-252 MOSFET

SW6N80D
N-channel Enhanced mode TO-251N/TO-220F/TO-252 MOSFET
Features
TO-251N TO-220F TO-252
 High ruggedness
 Low R_DS(ON) (Typ 2.0Ω)@V_GS=10V
 Low Gate Charge (Typ 32nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:LED , Charge, SMPS
12 ₃
12 ₃
12 ₃
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 800V
I_D
: 6A
R_DS(ON) : 2.0Ω
2
1
3
Item
Sales Type
1
SW N 6N80D
2
SW F 6N80D
3
SW D 6N80D
Absolute maximum ratings
Marking
SW6N80D
SW6N80D
SW6N80D
Package
TO-251N
TO-220F
TO-252
Packaging
TUBE
TUBE
REEL
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
(note 1)
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
TO-251N TO-220F TO-252
800
6*
3.8*
24
± 30
180
15
5
178.6
23.1
235.8
1.4
0.19
1.89
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
300
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
TO-251N
0.7
90
Value
TO-220F
5.4
52
TO-252
0.53
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 3.0
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