SW6N70A Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251MOSFET

SW6N70A
N-channel Enhanced mode TO-251 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 1.7Ω)@V_GS=10V
 Low Gate Charge (Typ 24nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Industrial Power, Charge, Adaptor
TO-251
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 700V
I_D
: 6A
R_DS(ON) : 1.7Ω
2
1
3
Order Codes
Item
Sales Type
1
SW I 6N70A
Marking
SW6N70A
Package
TO-251
Packaging
TUBE
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
700
6*
3.8*
24
±30
188
25
5
222
1.78
-55 ~ + 150
300
Value
0.56
77.3
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
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