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SW6N65K Datasheet, PDF (1/8 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-262 /TO-220SF MOSFET
SW6N65K
N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-262 /TO-220SF MOSFET
Features
TO-220F TO-251 TO-252 TO-262 TO-220SF
 High ruggedness
 Low RDS(ON) (Typ 0.8Ω)@VGS=10V
 Low Gate Charge (Typ 17nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Charge,LED
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BVDSS : 650V
ID
: 6A
RDS(ON) : 0.8Ω
2
1
3
Item
Sales Type
1
SW F 6N65K
2
SW I 6N65K
3
SW D 6N65K
4
SW U 6N65K
5
SW MN 6N65K
Marking
SW6N65K
SW6N65K
SW6N65K
SW6N65K
SW6N65K
Package
TO-220F
TO-251
TO-252
TO-262
TO-220SF
Packaging
TUBE
TUBE
REEL
TUBE
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to source voltage
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
(note 1)
(note 2)
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating factor above 25oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
Unit
TO220F TO251 TO252 TO-262 TO220SF
650
V
6*
A
3.8*
A
24
A
± 30
V
120
mJ
9
mJ
5
V/ns
24.5 147 156 192.3
36
W
0.2
1.2 1.3 1.54
0.3 W/oC
-55 ~ + 150
oC
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
TO220F
5.10
49.4
TO251
0.85
80.0
Value
TO252 TO262 TO220SF Unit
0.80 0.65
3.47 oC/W
70
48.6 oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jan. 2017. Rev. 3.0
1/8