SW6N60D Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET

SW6N60D
N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET
Features
TO-220F TO-252 TO-251N
 High ruggedness
 Low R_DS(ON) (Typ 1.4Ω)@V_GS=10V
 Low Gate Charge (Typ 23nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: UPS,Inverter,TV-POWER
12 ₃
123
123
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 600V
I_D
: 6A
R_DS(ON) :1.4Ω
2
1
3
Item
Sales Type
1
SW F 6N60D
2
SW D 6N60D
3
SW N 6N60D
Marking
SW6N60D
SW6N60D
SW6N60D
Package
TO-220F
TO-252
TO-251N
Packaging
TUBE
REEL
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
TO-220F
Value
TO-252
600
TO-251N
6*
3.8*
24
± 30
215
30
5
24
205
240
0.19
1.64
1.92
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
300
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
TO-220F
5.20
47.8
Value
TO-252
0.61
TO-251N
0.52
87.1
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 4.0
1/6