SW69N65K2 Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-247 MOSFET

SW69N65K2
N-channel Enhanced mode TO-247 MOSFET
Features
TO-247
 High ruggedness
 Low R_DS(ON) (Typ 32mΩ)
Low Gate Charge (Typ 181nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Charge,LED,PC Power
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 650V
I_D
: 69A
R_DS(ON) : 32mΩ
2
1
3
Order Codes
Item
Sales Type
1
SW T 69N65K2
Marking
SW69N65K2
Package
TO-247
Packaging
TUBE
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
(note 1)
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
650
69*
43*
276
± 30
2335
235
5
625
5
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
0.2
36
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 2.0
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