SW630A Datasheet, PDF (1/5 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel TO-220/D-PAK MOSFET

SAMWIN
SW630A
N-channel TO-220/D-PAK MOSFET
Features
■ High ruggedness
■ R_DS(ON) (Max 0.4 Ω)@V_GS=10V
■ Gate Charge (Typ 22nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220
TO-252
12
3
1
2
3
BV_DSS : 200V
I_D
: 10A
R_DS(ON) : 0.4ohm
2
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at high efficient DC to DC converter block and SMPS.
It’s typical application is TV and monitor.
1
3
Order Codes
Item
Sales Type
1
SW P 630A
2
SW D 630A
Marking
SW630
SW630
Package
TO-220
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc
R_thcs
R_thja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
TO-252
200
10*
6.3*
40
±30
600
120
5
132
148
1.06
1.18
-55 ~ + 150
300
Value
TO-220
TO-252
0.95
0.85
0.5
-
57.5
-
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
o_C/W
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