SW630 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – N-Channel MOSFET

SAMWIN
SW630
N-channel MOSFET
Features
TO-220F
TO-220
TO-252
■ High ruggedness
■ R_DS(ON) (Max 0.4 Ω)@V_GS=10V
■ Gate Charge (Typ 20nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
1
2
3
1
2
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at high efficient DC to DC converter block and SMPS.
It’s typical application is TV and monitor.
BV_DSS : 200V
I_D
: 10A
R_DS(ON) : 0.4ohm
2
1
3
Order Codes
Item
Sales Type
1
SW P 630
2
SW F 630
3
SW D 630
Absolute maximum ratings
Marking
SW630
SW630
SW630
Package
TO-220
TO-220F
TO-252
Packaging
TUBE
TUBE
REEL
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Value
TO-220
TO-220F
200
10
10.0*
5.5
5.5*
40
± 30
324
8.8
5
88
38*
0.7
0.3
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
TO-220F
1.42
3.33
0.5
62.5
Unit
o_C/W
o_C/W
o_C/W
Jun. 2011. Rev. 3.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/7