SW60N06V1 Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhancement mode TO-251MOSFET

SW60N06V1
N-channel Enhancement mode TO-251 MOSFET
Features
TO-251
 High ruggedness
 R_DS(ON) (Typ 11mΩ)@V_GS=10V
 R_DS(ON) (Typ 14.4mΩ)@V_GS=4.5V
 Gate Charge (Typ 72nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: DC-CD,Motor Control,
Synchronous Rectification
123
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 60V
I_D
: 60A
R_DS(ON) :11mΩ@V_GS=10V
14.4mΩ@V_GS=4.5V
2
1
3
Order Codes
Item
Sales Type
1
SW I 60N06V1
Marking
SW60N06V1
Package
TO-251
Packaging
TUBE
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
(note 3)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
60
60*
37.8*
240
±20
228
25
5
119
0.95
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc
R_thcs
R_thja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Value
1.05
0.5
84
Unit
o_C/W
o_C/W
o_C/W
Oct. 2015. Rev. 2.0
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