SW601Q Datasheet, PDF (1/4 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel SOT-23 MOSFET

SAMWIN
SW601Q
Features
■ R_DS(ON) (Max 700Ω)@V_GS=0V,ID=3mA
■ High Switching Speed
General Description
N-channel SOT-23 MOSFET
SOT-23
3
1
2
BV_DSS : 600V
I_D
: 0.185A
R_DS(ON) : 700Ω
3
1. Source 2. Gate 3. Drain
2
1
The SW601Q is an N-channel power MOSFET using SAMWIN’s
Advanced technology to provide the customers with high switching
speed.
Order Codes
Item
1
Sales Type
SW E 601Q
Marking
SW601Q
Package
SOT-23
Packaging
REEL
Absolute maximum ratings
Symbol
V_DSS
V_DGX
I_D
I_DM
V_GSS
P_D
T_J
T_STG,
Parameter
Drain to Source Voltage (Note 2)
Drain to Gate Voltage
(Note 2)
Continuous Drain Current (@T_C=25^oC)
Drain current pulsed
Gate to Source Voltage
Total power dissipation (@T_C=25^oC)
Junction Temperature
Storage Temperature
Thermal characteristics
Value
Unit
600
V
600
V
0.185
A
0.740
A
± 20
V
0.5
W
+ 150
o_C
-55 ~ + 150
o_C
Symbol
R_thja
Parameter
Thermal resistance, Junction to ambient
Value
250
Notes: 1. Absolute maximum ratings are those valuesbeyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. TJ=+25°C~+150°C
Unit
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 1.0
1/4