SW5N60D Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-220SF MOSFET

SW5N60D
N-channel Enhanced mode TO-220F/TO-220SF MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ1.9 Ω)@V_GS=10V
 Low Gate Charge (Typ17nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:DC-DC,LED
TO-220F
TO-220SF
12
3
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 600V
I_D
: 5A
R_DS(ON) : 1.9Ω
2
1
3
Order Codes
Item
Sales Type
1
SW F 5N60D
2
SW MN 5N60D
Absolute maximum ratings
Marking
SW5N60D
SW5N60D
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
P_D
T_STG, T_J
T_L
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc
Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Package
TO-220F
TO-220SF
Packaging
TUBE
TUBE
Value
TO-220F TO-220SF
600
5*
3.2*
20
± 30
166
15
5
19.5
31.3
0.16
0.25
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
TO-220F TO-220SF
6.42
4.0
47.8
46.0
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jan. 2017. Rev. 4.0
1/6