SW540 Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-252/TO-220 MOSFET

SW540
N-channel Enhanced mode TO-252/TO-220 MOSFET
Features
TO-252
TO-220
 High ruggedness
 Low R_DS(ON) (Typ 32mΩ)@V_GS=10V
 Low Gate Charge (Typ 48nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: Synchronous Rectification,
Li Battery Protect Board, Inverter.
1
2
3
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 100V
I_D
: 32A
R_DS(ON) : 32mΩ
2
1
3
Order Codes
Item
Sales Type
1
SW D 540
2
SW P 540
Absolute maximum ratings
Marking
SW540
SW540
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Package
TO-252
TO-220
Packaging
REEL
TUBE
Value
TO-252 TO-220
100
32*
20*
128
± 20
117
12
5
Unit
V
A
A
A
V
mJ
mJ
V/ns
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
83
125
0.7
1.0
W
W/^oC
T_STG, T_J Operating junction temperature & storage temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
-55 ~ + 150
o_C
Value
TO-252 TO-220
1.5
1.0
56.7
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Dec. 2016. Rev. 2.0
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