SW50P03 Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – P-channel Enhanced mode TO-251 MOSFET

SW50P03
P-channel Enhanced mode TO-251 MOSFET
Features
 High ruggedness
 Low R_DS(ON) (Typ 12mΩ)@V_GS=-4.5V
Low R_DS(ON) (Typ 8.5mΩ)@V_GS=-10V
 Low Gate Charge (Typ 69nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: Adaptor Input Switch
for Notebook PC
TO-251
1
2
3
1. Gate 2. Drain 3. Source
BV_DSS : -30V
I_D
: -85A
R_DS(ON) : 12mΩ @V_GS=-4.5V
8.5mΩ @V_GS=-10V
2
General Description
1
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including
3
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW I 50P03
SW50P03
TO-251
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
Total power dissipation (@T_C=25^oC)
P_D
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
-30
-85*
-54*
-340
± 20
109
13
5
83
0.67
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
1.5
72
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2017. Rev. 2.0
1/6