SW50N06V Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhancement mode TO-220/TO-252 MOSFET

SW50N06V
N-channel Enhancement mode TO-220/TO-252 MOSFET
Features
 High ruggedness
 R_DS(ON) (Typ 10mΩ)@V_GS=10V
 Gate Charge (Typ 43nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: DC-DC, Motor control
TO-220
TO-252
12
3
1
2
3
1. Gate 2. Drain 3. Source
BV_DSS : 60V
I_D
: 50A
R_DS(ON) : 10mΩ
2
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
1
3
Order Codes
Item
1
2
Sales Type
SW P 50N06V
SW D 50N06V
Marking
SW50N06V
SW50N06V
Package
TO-220
TO-252
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
Gate to Source Voltage
(note 1)
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
TO-220
TO-252
60
50*
31.5*
200
±20
200
28
5
74
57
0.6
0.5
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc
R_thcs
R_thja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
1.7
TO-252
2.2
0.5
50
70.4
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 3.0
Unit
o_C/W
o_C/W
o_C/W
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