SW50N06T Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel D-PAK/TO-220 MOSFET

SAMWIN
SW50N06T
N-channel D-PAK/TO-220 MOSFET
Features
■ High ruggedness
■ R_DS(ON) (Max 16.8mΩ)@V_GS=10V
■ Gate Charge (Typ 41nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-252
TO-220
1
2
3
12 ₃
BV_DSS : 60V
I_D
: 50A
R_DS(ON) : 16.8mΩ
2
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching mode power appliances.
1
3
Order Codes
Item
1
2
Sales Type
SW D 50N06
SW P 50N06
Marking
SW50N06T
SW50N06T
Package
TO-252
TO-220
Packaging
REEL
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-252
TO-220
60
50*
32*
200
± 20
180
23.4
5
87.4
114.7
0.7
0.9
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
TO-252
TO-220
1.43
1.09
71.8
53.1
Unit
o_C/W
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.2.0
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