SW4N80K Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET

SW4N80K
N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET
Features
TO-220F TO-251N TO-252
 High ruggedness
 Low R_DS(ON) (Typ 1.8Ω)@V_GS=10V
 Low Gate Charge (Typ 13nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: LED, Charge, Adaptor
1
23
1
23
1
23
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
1
SW F 4N80K
SW4N80K
2
SW N 4N80K
SW4N80K
3
SW D 4N80K
SW4N80K
BV_DSS : 800V
I_D
: 4A
R_DS(ON) : 1.8Ω
2
1
3
Package
TO-220F
TO-251N
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
P_D
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
T_STG, T_J Operating junction temperature & storage temperature
Maximum lead temperature for soldering
T_L
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-220F TO-251N TO-252
800
4*
2.5*
16
± 30
40
5
5
16.9
104.2
96.2
0.14
0.83
0.77
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
TO-220F TO-251N TO-252
7.4
1.2
1.3
54
90
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 3.0
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