SW4N70K Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhancement mode TO-220F/TO-251/TO-252 MOSFET

SW4N70K
N-channel Enhancement mode TO-220F/TO-251/TO-252 MOSFET
Features
TO-220F TO-251 TO-252
 High ruggedness
 R_DS(ON) (Typ 1.0Ω)@V_GS=10V
 Gate Charge (Typ 13nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Adapter,LED,Charger
123
12
3
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 700V
I_D
: 4A
R_DS(ON) : 1.0Ω
2
1
3
Order Codes
Item
Sales Type
1
SW F 4N70K
2
SW I 4N70K
3
SW D 4N70K
Marking
SW4N70K
SW4N70K
SW4N70K
Package
TO-220F
TO-251
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Parameter
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
TO-220F TO-251
700
4*
2.5*
16
±30
50
8
5
19.5
82.4
0.16
0.66
-55 ~ + 150
300
TO-252
83.3
0.66
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
TO-220F
R_thjc
Thermal resistance, Junction to case
6.4
R_thcs
Thermal resistance, Case to Sink
0.5
R_thja
Thermal resistance, Junction to ambient
50
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Value
TO-251
1.5
0.5
81
TO-252
1.5
82
Oct. 2015. Rev. 4.0
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
o_C/W
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