SW4N70D1 Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2 MOSFET

SW4N70D1
N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2 MOSFET
Features
TO-251S TO-251N TO-251N-S2
 High ruggedness
 Low R_DS(ON) (Typ 2.1Ω)@V_GS=10V
 Low Gate Charge (Typ 18nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Adapter,LED,Charger
12
3
12 ₃
12 ₃
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 700V
I_D
: 4A
R_DS(ON) : 2.1Ω
2
1
3
Item
Sales Type
1
SW SI 4N70D1
2
SW N 4N70D1
3
SW NC 4N70D1
Marking
SW4N70D1
SW4N70D1
SW4N70D1
Package
TO-251S
TO-251N
TO-251N-S2
Packaging
TUBE
TUBE
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 3)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
TO-251S
TO-251N
TO-251N-
S2
700
4*
2.4*
16
± 30
160
20
5
164
1.3
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
300
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
TO-251S
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Value
TO-251N
TO-251N-
S2
0.76
90
May. 2017. Rev. 5.0
Unit
o_C/W
o_C/W
1/6