SW4N70D Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251/TO-252/TO-220F MOSFET

SW4N70D
N-channel Enhanced mode TO-251/TO-252/TO-220F MOSFET
Features
TO-251
TO-252 TO-220F
 High ruggedness
 Low R_DS(ON) (Typ 2.3Ω)@V_GS=10V
 Low Gate Charge (Typ 20nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Charger,LED
12
3
12
3
12
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 700V
I_D
: 4A
R_DS(ON) : 2.3Ω
2
1
3
Item
Sales Type
1
SW I 4N70D
2
SW D 4N70D
3
SW F 4N70D
Marking
SW4N70D
SW4N70D
SW4N70D
Package
TO-251
TO-252
TO-220F
Packaging
TUBE
REEL
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
Gate to source voltage
Single pulsed avalanche energy
Repetitive avalanche energy
Peak diode recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
P_D
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
T_STG, T_J
T_L
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc
Thermal resistance, Junction to case
R_thja
Thermal resistance, Junction to ambient
Value
TO-251 TO-252 TO-220F
700
4*
2.5*
16
± 30
200
10
5
145
160.3
20.7
1.16
1.28
0.17
-55 ~ + 150
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
300
o_C
TO-251
0.86
81.4
Value
TO-252 TO-220F
0.78
6.04
86.8
52.1
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jul. 2016. Rev. 3.0
1/7