SW4N65K2 Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET

SW4N65K2
N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET
Features
TO-220F
TO-251N TO-252
 High ruggedness
 Low R_DS(ON) (Typ 1.10Ω)@V_GS=10V
 Low Gate Charge (Typ 7.1nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:LED, Charge, Adaptor
1
2
3
1
23
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced super junction technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 650V
I_D
:4A
R_DS(ON) : 1.10Ω
2
1
3
Order Codes
Item
Sales Type
1
SW F 4N65K2
2
SW N 4N65K2
3
SW D 4N65K2
Marking
SW4N65K2
SW4N65K2
SW4N65K2
Package
TO-220F
TO-251N
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
Value
TO-220F TO-251N TO-252
650
4*
2.5*
16
± 30
50
5
5
16.7
73.5
65.4
0.13
0.59
0.53
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
TO-220F TO-251N TO-252
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
7.5
1.7
1.9
86
103
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2016. Rev. 2.0
Unit
o_C/W
o_C/W
1/6