SW4N65DC Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhanced mode TO-251/TO-251N-S2 MOSFET

SW4N65DC
N-channel Enhanced mode TO-251/TO-251N-S2 MOSFET
Features
TO-251 TO-251N-S2
 High ruggedness
 Low R_DS(ON) (Typ 1.95Ω)@V_GS=10V
 Low Gate Charge (Typ 17nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: Charger,TV-POWER
1
2
3
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV_DSS : 650V
I_D
: 4A
R_DS(ON) : 1.95Ω
2
1
3
Order Codes
Item
1
2
Sales Type
SW I 4N65DC
SW NC4N65DC
Marking
SW4N65DC
SW4N65DC
Package
TO-251
TO-251N-S2
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to source voltage
Continuous drain current (@T_C=25^oC)
Continuous drain current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
Total power dissipation (@T_C=25^oC)
Derating factor above 25^oC
(note 3)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
R_thjc Thermal resistance, Junction to case
R_thja Thermal resistance, Junction to ambient
Value
TO-251 TO-251N-S2
650
4*
2.5*
16
± 30
184
30
5
147
147
1.18
1.18
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Value
TO-251 TO-251N-S2
0.85
0.85
90
90
Unit
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2016. Rev. 3.0
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