SW4N60DC Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel Enhancement mode TO-251/TO-252MOSFET

SW4N60DC
N-channel Enhancement mode TO-251/TO-252 MOSFET
Features
 High ruggedness
 R_DS(ON) (Typ 2.0Ω)@V_GS=10V
 Gate Charge (Typ 17nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: LED,Charge
TO-251
TO-252
12 ₃
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
BV_DSS : 600V
I_D
: 4A
R_DS(ON) : 2.0Ω
2
1
3
Item
Sales Type
1
SW I 4N60DC
2
SW D 4N60DC
Marking
SW4N60DC
SW4N60DC
Package
TO251
TO252
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
TO-251
TO-252
600
4*
2.5*
16
±30
170
25
5
147
147
1.17
1.17
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-251
TO-252
0.85
0.85
87
Unit
o_C/W
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
1/6