SW4N60D Datasheet, PDF (1/6 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel TO-220F/I-PAKN/D-PAK MOSFET

SAMWIN
SW4N60D
N-channel TO-220F/I-PAKN/D-PAK MOSFET
Features
TO-220F TO-251N TO-252
■ High ruggedness
■ R_DS(ON) (Max 2.2Ω)@V_GS=10V
■ Gate Charge (Typ 18nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
123
12
3
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
BV_DSS : 600V
I_D
: 4A
R_DS(ON) : 2.2Ω
2
1
3
Order Codes
Item
1
2
3
Sales Type
SW F 4N60
SW I 4N60
SW D 4N60
Marking
SW4N60D
SW4N60D
SW4N60D
Package
TO-220F
TO-251N
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
P_D
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
T_STG, T_J
T_L
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
TO-220F TO-251N TO-252
600
4*
2.5*
16
± 30
184
55
5
23.5
152.6 141.0
0.19
1.22
1.13
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220F TO-251N
5.31
0.82
TO-252
0.89
47.1
83.5
79.0
Unit
o_C/W
o_C/W
o_C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 2.0
1/6