SW4N60A Datasheet, PDF (1/7 Pages) Xian Semipower Electronic Technology Co., Ltd. – N-channel MOSFET

SAMWIN
SW4N60A
N-channel MOSFET
Features
TO-220F
TO-220
■ High ruggedness
■ R_DS(ON) (Max 2.2 Ω)@V_GS=10V
■ Gate Charge (Typ 25nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
12 ₃
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
BV_DSS : 600V
I_D
: 4.0A
R_DS(ON) : 2.2ohm
2
1
3
Order Codes
Item
1
2
Sales Type
SW P 4N60A
SW F 4N60A
Absolute maximum ratings
Marking
SW4N60A
SW4N60A
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
T_STG, T_J
T_L
Drain to Source Voltage
Continuous Drain Current (@T_C=25^oC)
Continuous Drain Current (@T_C=100^oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@T_C=25^oC)
Derating Factor above 25^oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Value
TO-220
TO-220F
600
4.0
4.0*
2.6
2.5*
16
± 30
220
10
4.5
100
33*
0.8
0.26
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/^oC
o_C
o_C
Thermal characteristics
Symbol
R_thjc
R_thcs
R_thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220
TO-220F
1.25
3.8
0.5
62.5
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Unit
o_C/W
o_C/W
o_C/W
1/7